White Paper:
Gate Drives and Gate Driving with
SiC MOSFETs
The use of silicon carbide (SiC) MOSFETs has enabled high-efficiency power delivery for a variety of applications, such as electric-vehicle fast charging, power supplies, renewable energy, and grid infrastructure. Although their performance is better than traditional silicon MOSFETs and insulated-gate bipolar transistors (IGBTs), the driving methods are somewhat different and must be carefully considered during the design process.
Learn more in this latest white paper from Wolfspeed and Richardson RFPD.
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