1.7 kV SiC MOSFET is an excellent choice for using a single switch flyback topology in an auxiliary power supply application that requires a wide input voltage range. The 1.7 kV breakdown voltage provides sufficient voltage margin for the 1 kV input voltage. The specific on-resistance of 1.7 kV SiC MOSFET is much lower than that of high-voltage silicon MOSFET, allowing for a smaller die size and lower on-resistance in the same package. The smaller die size also significantly reduces switching loss. This option allows the user to increase the switching frequency of the auxiliary power supply in order to reduce transformer size and weight.
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