Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires. Leverage our knowledge regarding the unique challenges driving these faster-switching devices and the best thermal options for these increasingly compact designs.
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Your Global Resource for RF, Wireless,
IoT & Energy Power Technologies
Richardson RFPD, 1950 S. Batavia Ave.,
Ste 100, Geneva, IL. 60134